【报告题目】Computational Design of Electronic Materials and Devices Beyond the Moore’s Law
【报 告 人】李元副教授，山东大学
【报告时间】12月9日9：00
【腾讯会议ID】607 618 062
【报告摘要】With the scaling down of field-effect transistors (FETs) toward the physical limit at atomic scale, the Moore’s law predicting the roadmap for conventional CMOS technology is coming to an end. It is urgently desired to develop alternative nanoelectronics by designing and exploiting novel electronic materials and devices in the post-Moore’s law era. In this talk, I will talk about our recent works on the design of such materials and devices by means of first-principles calculations and atomic-scale device modeling tools. Two types of systems will be focused. One is the CMOS-compatible novel Si materials and devices, such as 2D-Si semiconductors and 3D NAND flash memory. The other is the non-Si ones beyond CMOS, such as 2D materials for application in high-performance and low-power nano-FETs as well as steep-slope FETs based on novel principles. The charge-transport properties and device application of some organic 2D materials, such as 2D covalent-organic frameworks, will also be discussed.
【报告人简介】李元，山东大学信息科学与工程学院，副教授，IEEE Senior Member。2004年本科和2009年博士毕业于山东大学物理学院。2010至2016年先后在美国佐治亚理工学院和沙特阿卜杜拉国王科技大学（KAUST）担任博士后和Research Scientist。主要研究方向为面向后摩尔定律时代的信息功能材料与器件的理论计算设计和仿真工具开发，特别是基于有机材料和二维材料的低功耗高性能纳米电子器件及其相关理论。已在专业期刊和会议合作发表学术论文80余篇，主持国家自然科学基金面上项目3项，参与重大研究计划和科技部重点研发计划项目3项。
【邀请人】南广军 副教授
欢迎广大老师和同学参加！
